Samsung Taylor Fab 2 and AMD HBM

Samsung's second Taylor, Texas fab has reportedly pre-booked its full planned 2nm output for HBM base dies, with AMD taking most of the capacity, before construction has even begun. Equipment installation is expected around 2029 with mass production planned for 2030. Samsung has not officially confirmed which products the fab will manufacture. Separately, Nvidia is reportedly asking Samsung, SK Hynix, and Micron to fabricate its custom NVHBM base dies on TSMC's 3nm process, an arrangement that would route memory-related revenue to TSMC without requiring it to enter the DRAM market. TSMC denied a related report that Nvidia had pushed it toward 3D DRAM, stating it will remain a pure logic foundry. In parallel, Samsung and SK Hynix are each reportedly committing between ₩10 trillion and ₩20 trillion to secure ASML EUV lithography tools amid supply constraints, with ASML having formally told customers it cannot produce enough EUV tools to meet 2027 and 2028 demand.